HGTG7N60A4

HGTG7N60A4 Datasheet

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4

Part	Datasheet
HGTG7N60A4	HGTG7N60A4 (pdf)

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Data Sheet HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 September 2004 600V, SMPS Series N-Channel IGBT The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49331. Ordering Information PACKAGE BRAND HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4 TO-263AB TO-247 TO-220AB G7N60A4 NOTE When ordering, use the entire part number. Packaging JEDEC STYLE TO-247 COLLECTOR BOTTOM SIDE METAL • >100kHz Operation at 390V, 7A • 200kHz Operation at 390V, 5A • 600V Switching SOA Capability • Typical Fall Time 75ns at TJ = 125oC • Low Conduction Loss E JEDEC TO-220AB E C G COLLECTOR FLANGE JEDEC TO-263AB COLLECTOR FLANGE FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176

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Data Sheet

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4

September 2004
600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49331.
Ordering Information

PACKAGE

BRAND

HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4

TO-263AB TO-247 TO-220AB

G7N60A4
NOTE When ordering, use the entire part number.

Packaging

JEDEC STYLE TO-247

COLLECTOR BOTTOM SIDE METAL
• >100kHz Operation at 390V, 7A
• 200kHz Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time 75ns at TJ = 125oC
• Low Conduction Loss

E JEDEC TO-220AB

E C G COLLECTOR

FLANGE

JEDEC TO-263AB

COLLECTOR

FLANGE

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176

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Datasheet ID: HGTG7N60A4 633887