SPI47N10
SPI47N10 Datasheet
SPI47N10 SPP47N10,SPB47N10
| Part | Datasheet |
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SPI47N10 |
SPI47N10 (pdf) |
| Related Parts | Information |
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SPP47N10 |
SPP47N10 |
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SPB47N10 |
SPB47N10 |
| PDF Datasheet Preview |
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| Preliminary data SPI47N10 SPP47N10,SPB47N10 Power-Transistor N-Channel Enhancement mode operating temperature Avalanche rated P-TO262-3-1 dv/dt rated Product Summary 100 V RDS on 33 m P-TO263-3-2 P-TO220-3-1 Type SPP47N10 SPB47N10 SPI47N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67040-S4183 Q67040-S4173 Q67060-S7431 Marking 47N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=47 A , VDD=25V, RGS=25 ID puls EAR dv/dt IS=47A, VDS=0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C VGS Ptot Operating and storage temperature IEC climatic category DIN IEC 68-1 Tj , Tstg Value Unit kV/µs ±20 +175 55/175/56 2002-01-09 Preliminary data SPI47N10 SPP47N10,SPB47N10 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 1 Values Unit min. typ. max. RthJC RthJA - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. |
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