FYP2004DNTU
FYP2004DNTU Datasheet
FYP2004DN
| Part | Datasheet |
|---|---|
FYP2004DNTU |
FYP2004DNTU (pdf) |
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| FYP2004DN FYP2004DN • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection • Switched mode power supply • Freewheeling diodes TO-220 Anode 2.Cathode Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VRRM VR IF AV IFSM Average Rectified Forward Current TC = 131°C Non-repetitive Peak Surge Current per diode 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics Parameter Maximum Thermal Resistance, Junction to Case per diode Electrical Characteristics per diode Symbol VFM * IRM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A * Pulse Test Pulse Width=300µs, Duty Cycle=2% TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Value 40 20 150 -65 to +150 Value Value Units V A °C Units °C/W Units V 2001 Fairchild Semiconductor Corporation FYP2004DN Typical Characteristics Forward Current, I F[A] TJ=125 oC TJ=75 oC TJ=25 oC Forward Voltage Drop, VF[V] Figure Typical Forward Voltage Characteristics per diode Junction Capacitance, C J[pF] |
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