BFR 183T E6327
BFR 183T E6327 Datasheet
BFR183T
| Part | Datasheet |
|---|---|
BFR 183T E6327 |
BFR 183T E6327 (pdf) |
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| NPN Silicon RF Transistor Preliminary data For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz F = dB at 900 MHz BFR183T 2 1 VPS05996 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR183T Marking RHs Pin Configuration Package SC75 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 83°C 1 Junction temperature Ambient temperature Storage temperature Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 2 65 5 250 150 -65 150 -65 150 Unit V mA mW °C Thermal Resistance Junction - soldering point2 RthJS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Aug-22-2001 BFR183T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V V BR CEO 12 ICES - 100 µA ICBO - 100 nA IEBO 1 µA 50 100 200 - Aug-22-2001 BFR183T |
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