FSB6726
FSB6726 Datasheet
FSB6726
| Part | Datasheet |
|---|---|
FSB6726 |
FSB6726 (pdf) |
| PDF Datasheet Preview |
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| FSB6726 FSB6726 B SuperSOTTM-3 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to A. Sourced from Process Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter FSB660/FSB660A VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Units V A °C NOTES 1 These ratings are based on a maximum junction temperature of 150°C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Thermal Resistance, Junction to Ambient FSB6726 500 250 Units mW °C/W 1999 Fairchild Semiconductor Corporation FSB6726 PNP General Purpose Amplifier continued Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO Collector-Emitter Breakdown Voltage BVCBO Collector-Base Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage |
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