FGH20N6S2D

FGH20N6S2D Datasheet


FGH20N6S2D / FGP20N6S2D / FGB20N6S2D

Part Datasheet
FGH20N6S2D FGH20N6S2D FGH20N6S2D (pdf)
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FGH20N6S2D / FGP20N6S2D / FGB20N6S2D

July 2002

FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability UIS . These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:
• Power Factor Correction PFC circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. 85ns at TJ = 125oC
• Low Gate Charge 30nC at VGE = 15V
• Low Plateau Voltage .6.5V Typical
• UIS Rated 100mJ
• Low Conduction Loss
• Low Eon
• Soft Recovery Diode

IGBT co-pack formerly Developmental Type TA49332 Diode formerly Developmental Type TA49469

Package

TO-247

TO-220AB

TO-263AB

Device Maximum Ratings TC= 25°C unless otherwise noted

COLLECTOR FLANGE

Parameter

Ratings

Units

BVCES Collector to Emitter Breakdown Voltage

IC25

Collector Current Continuous, TC = 25°C

IC110

Collector Current Continuous, TC = 110°C

Collector Current Pulsed Note 1

VGES

Gate to Emitter Voltage Continuous
±20

VGEM Gate to Emitter Voltage Pulsed
±30

SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
35A at 600V

Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V

Power Dissipation Total TC = 25°C

Power Dissipation Derating TC > 25°C

W/°C

Operating Junction Temperature Range
-55 to 150

TSTG

Storage Junction Temperature Range
-55 to 150

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
Package Marking and Ordering Information

Device Marking 20N6S2D

Device FGH20N6S2D FGP20N6S2D FGB20N6S2D FGB20N6S2DT

Package TO-247 TO-220AB TO-263AB TO-263AB

Tape Width N/A N/A N/A
24mm

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Off State Characteristics

BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0

ICES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C

TJ = 125°C -

IGES Gate to Emitter Leakage Current

VGE = ± 20V

On State Characteristics

VCE SAT Collector to Emitter Saturation Voltage IC = 7.0A,

TJ = 25°C

VGE = 15V

TJ = 125°C

Diode Forward Voltage

IEC = 7.0A

Dynamic Characteristics

QG ON Gate Charge

VGE TH VGEP

Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage

Switching Characteristics

IC = 7.0A,

VGE = 15V

VCE = 300V VGE = 20V

IC = 250µA, VCE = 600V

IC = 7.0A, VCE = 300V

SSOA Switching SOA
td ON I trI
td OFF I tfI

EON1 EON2 EOFF td ON I
trI td OFF I
tfI EON1 EON2 EOFF

Thermal Characteristics

TJ = 150°C, RG = VGE = 35 15V, L = 0.5mH VCE = 600V

IGBT and Diode at TJ = 25°C, -
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Datasheet ID: FGH20N6S2D 514594