FQPF9N08L

FQPF9N08L Datasheet


FQPF9N08L

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FQPF9N08L FQPF9N08L FQPF9N08L (pdf)
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FQPF9N08L

FQPF9N08L
80V LOGIC N-Channel MOSFET

December 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
• 7.0A, 80V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical 16 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirements allowing
direct operation from logic drives

TO-220F

FQPF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

FQPF9N08L 80 28 ± 20 55 23
-55 to +175

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W
2000 Fairchild Semiconductor International
More datasheets: 55444.2 | 55444.1 | QT220-ISSG | CY7C1383D-100AXC | CY7C1381F-133BGC | CY7C1381F-133BGCT | CY7C1381D-100BZC | CY7C1381D-133AXIT | CY7C1383D-133AXIT | CY7C1383D-100AXCT


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Datasheet ID: FQPF9N08L 515455