FQPF4P40
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FQPF4P40 (pdf) |
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FQPF4P40 FQPF4P40 400V P-Channel MOSFET August 2000 QFETTM These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. • -2.4A, -400V, RDS on = = -10 V • Low gate charge typical 18 nC • Low Crss typical 11 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220F FQPF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ● ● FQPF4P40 -400 ± 30 260 39 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W 2000 Fairchild Semiconductor International |
More datasheets: REFERENCE DESIGN 48V | KSC421 V30 ACT2.95 LFS | KSC421 V30 ACT3.17 LFS | 1779 | CDBM260-G | CDBM220-G | CDBM230-G | CDBM280-G | PI2EQX4401ZFE | 2910 |
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