FQPF3P20
FQPF3P20 Datasheet
FQPF3P20
| Part | Datasheet |
|---|---|
FQPF3P20 |
FQPF3P20 (pdf) |
| PDF Datasheet Preview |
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| QFET P-CHANNEL • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge 6.0nC Typ. • Extended Safe Operating Area • Lower RDS ON Typ. ABSOLUTE MAXIMUM RATINGS Symbol VDSS IDM VGS EAS IAR EAR dv/dt TJ, TSTG Characteristics Drain-to-Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC = 25°C Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds THERMAL RESISTANCE Characteristics Junction-to-Case Junction-to-Ambient FQPF3P20 BVDSS = −200V RDS ON = ID = −2.2A TO-220F Gate Drain Source Value −200 ±30 150 −55 to +150 Units V A V mJ A mJ V/ns W/°C Typ. − − Max. Units °C/W 1999 Fairchild Semiconductor Corporation FQPF3P20 QFET P-CHANNEL ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise specified Symbol BVDSS VGS th IGSS IDSS Drain-to-Source Leakage Current RDS on gfs Ciss Coss Crss td on |
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