FDS8874
FDS8874 Datasheet
FDS8874 N-Channel MOSFET
| Part | Datasheet |
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FDS8874 |
FDS8874 (pdf) |
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| FDS8874 N-Channel MOSFET April 2007 FDS8874 N-Channel MOSFET 30V, 16A, - rDS on = VGS = 10V, ID = 16A - rDS on = VGS = 4.5V, ID = 15A - High performance trench technology for extremely low rDS on - Low gate charge - High power and current handling capability - 100% Rg tested - RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed. - DC/DC converters SO-8 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TA = 25oC, VGS = 10V, = 50oC/W Continuous TA = 25oC, VGS = 4.5V, = 50oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC Operating and Storage Temperature Thermal Characteristics Thermal Resistance, Junction to Case Note 2 Thermal Resistance, Junction to Ambient Note 2a Thermal Resistance, Junction to Ambient Note 2b Package Marking and Ordering Information Device Marking FDS8874 Device FDS8874 Package SO-8 Reel Size 330mm 4 3 2 1 Ratings 30 ±20 16 15 115 265 20 -55 to 150 25 50 125 Units V A mJ W mW/oC oC/W oC/W oC/W Tape Width 12mm Quantity 2500 units 2007 Fairchild Semiconductor Corporation FDS8874 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 24V VGS = 0V TJ = 150oC - VGS = ±20V ±100 nA On Characteristics VGS TH Gate to Source Threshold Voltage rDS on Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 16A, VGS = 10V ID = 15A, VGS = 4.5V ID = 16A, VGS = 10V, TJ = 150oC Dynamic Characteristics CISS COSS CRSS RG Qg TOT Qg 5 Qgs Qgs2 Qgd VDS = 15V, VGS = 0V, f = 1MHz |
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