FQP7N65C/FQPF7N65C
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FQPF7N65C_F105 (pdf) |
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FQP7N65C |
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FQP7N65C/FQPF7N65C FQP7N65C/FQPF7N65C 650V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • 7A, 650V, RDS on = = 10 V • Low gate charge typical 28 nC • Low Crss typical 12 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220 FQP Series TO-220F FQPF Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 VGSS Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 dv/dt Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. FQP7N65C FQPF7N65C ± 30 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C |
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