FQP6P25

FQP6P25 Datasheet


FQP6P25

Part Datasheet
FQP6P25 FQP6P25 FQP6P25 (pdf)
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FQP6P25

FQP6P25
250V P-Channel MOSFET

April 2000

QFETTM

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
• -6.0A, -250V, RDS on = = -10 V
• Low gate charge typical 21 nC
• Low Crss typical 20 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-220

FQP Series

Absolute Maximum TC = 25°C unless otherwise noted

Parameter

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

FQP6P25 -250 -24 540 90
-55 to +150
2000 Fairchild Semiconductor International

Units V A V mJ A mJ

V/ns W

W/°C °C °C

Units

FQP6P25

Electrical = 25°C unless otherwise noted
More datasheets: AD9834BRU-REEL | CY3273 | CY8CLED04-68LTXI | CY8CLED04-68LFXIT | CY8CLED04-68LFXI | CY8CLED04-68LTXIT | CDC40-12 | 45445 BK001 | 45445 BK005 | FIT0489-D


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Datasheet ID: FQP6P25 515351