FQP6N50C

FQP6N50C Datasheet

FQP6N50C 500V N-Channel MOSFET

Part	Datasheet
FQP6N50C	FQP6N50C (pdf)

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FQP6N50C 500V N-Channel MOSFET FQP6N50C 500V N-Channel MOSFET • A, 500 V, RDS on = VGS = 10 V • Low gate charge typical 19 nC • Low Crss typical 15 pF • Fast switching • 100 % avalanche tested • Improved dv/dt capability QFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220 FQP Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient ● ● FQP6N50C 500 22 ± 30 300 98 -55 to +150 300 Units V A V mJ A mJ V/ns W/°C °C °C Units °C/W °C/W °C/W 2005 Fairchild Semiconductor Corporation FQP6N50C 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQP6N50C Device FQP6N50C Package TO-220 Reel Size -- Tape Width -- Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V On Characteristics VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = A VDS = 40 V, ID = A Note 4 Dynamic Characteristics Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = MHz Switching Characteristics td on tr td off tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 250 V, ID = A, RG = 25 Note 4, 5 VDS = 400 V, ID = A, VGS = 10 V Note 4, 5 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = A

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FQP6N50C 500V N-Channel MOSFET

FQP6N50C
500V N-Channel MOSFET
• A, 500 V, RDS on = VGS = 10 V
• Low gate charge typical 19 nC
• Low Crss typical 15 pF
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability

QFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

TO-220

FQP Series

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
● ●

FQP6N50C
500 22 ± 30 300 98 -55 to +150 300

Units

V A V mJ A mJ V/ns W/°C °C °C

Units
°C/W °C/W °C/W
2005 Fairchild Semiconductor Corporation

FQP6N50C 500V N-Channel MOSFET
Package Marking and Ordering Information

Device Marking FQP6N50C

Device FQP6N50C

Package TO-220

Reel Size --

Tape Width --

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min. Typ.

Off Characteristics

BVDSS IDSS

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF IGSSR

VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C

VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V

On Characteristics

VGS th RDS on

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

VDS = VGS, ID = 250 µA VGS = 10 V, ID = A

VDS = 40 V, ID = A

Note 4

Dynamic Characteristics

Ciss Coss Crss

VDS = 25 V, VGS = 0 V, f = MHz

Switching Characteristics
td on tr td off tf Qg Qgs Qgd

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

VDD = 250 V, ID = A, RG = 25

Note 4, 5

VDS = 400 V, ID = A, VGS = 10 V

Note 4, 5

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = A

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Datasheet ID: FQP6N50C 515345