BUT12/12A
Part | Datasheet |
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BUT12ATU (pdf) |
Related Parts | Information |
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BUT12A |
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BUT12TU |
PDF Datasheet Preview |
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BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO Collector-Base Voltage BUT12 BUT12A VCEO Collector-Emitter Voltage BUT12 BUT12A IC ICP IB PC TJ TSTG Collector Current DC *Collector Current Pulse Base Current Collector Dissipation TC=25°C Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition VCEO sus * Collector-Emitter Sustaining Voltage ICES Collector Cut-off Current IEBO Emitter Cut-off Current VCE sat * Collector-Emitter Saturation Voltage VBE sat * Base-Emitter Saturation Voltage Turn On Time tSTG Storage Time Fall Time * Pulsed Test PW = 300µs, duty cycle = IC = 100mA, L = 25mH VCE = VCES, VBE = 0 VBE = 9V, IC = 0 IC = 6A, IB = 1.2A IC = 6A, IB = 1.2A VCC = 250V, IC = 6A IB1 = - IB2 = 1.2A RL = Value 850 1000 400 450 8 20 4 100 150 - 65 ~ 175 |
More datasheets: ASMT-QYBJ-NFHGE | ASMT-QYBH-NEGGE | ASMT-QYBH-NEGHE | ASMT-QYBJ-NFH1E | ASMT-QYBJ-NFHHE | ASMT-QYBJ-NFHJE | ASMT-QYBG-NEG1E | ASMT-QYBH-NEGJE | BUT12A | BUT12TU |
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