FQP5N80
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FQP5N80 (pdf) |
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FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 4.8A, 800V, RDS on = = 10 V • Low gate charge typical 25 nC • Low Crss typical 11 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220 FQP Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FQP5N80 800 ± 30 590 14 140 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W °C/W °C/W 2000 Fairchild Semiconductor International FQP5N80 |
More datasheets: ATV750B-15LM/883 | ATV750B-10LM/883 | ATV750B-15DM/883 | ATV750B-10DM/883 | ATV750BL-15DM/883 | ATV750BL-15LM/883 | DCH3-050UK-0001 | DCH3-050EU-0001 | 241A20420X-S1 | 3UGC |
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