FQP4N90
FQP4N90 Datasheet
FQP4N90
| Part | Datasheet |
|---|---|
FQP4N90 |
FQP4N90 (pdf) |
| PDF Datasheet Preview |
|---|
| FQP4N90 FQP4N90 900V N-Channel MOSFET October 2001 QFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. • 4.2A, 900V, RDS on = VGS = 10 V • Low gate charge typically 24 nC • Low Crss typically pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220 IRF Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FQP4N90 900 ± 30 570 14 140 -55 to +150 2001 Fairchild Semiconductor Corporation Units V A V mJ A mJ V/ns W W/°C °C °C Units °C/W °C/W °C/W FQP4N90 |
| More datasheets: 6551304104F | 6551404104F | 6552404103F | 6551403104F | 6551304103F | 6551403103F | 6551303103F | 6551204104F | 6552403103F | AO4924L |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FQP4N90 Datasheet file may be downloaded here without warranties.