AO4924L

AO4924L Datasheet


AO4924 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

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AO4924L AO4924L AO4924L (pdf)
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AO4924 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

SRFET TM
The AO4924 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4924 is Pb-free meets ROHS & Sony 259 specifications . AO4924L is a Green Product ordering option. AO4924L and AO4924 are electrically identical.

FET1 VDS V = 30V ID = 9A RDS ON < RDS ON <

FET2

VDS V = 30V

I D=7.3A

VGS = 10V

VGS = 10V

VGS = 4.5V

UIS TESTED! Rg,Ciss,Coss,Crss Tested

SOIC-8

S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2

SRFET TM Soft Recovery MOSFET Integrated Schottky Diode

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Max FET1

Drain-Source Voltage

Gate-Source Voltage
±12

Continuous Drain TA=25°C

Current A

TA=70°C

IDSM

Pulsed Drain Current B

Avalanche Current B

Repetitive avalanche energy L=0.3mH B

Power Dissipation

TA=25°C TA=70°C

PDSM

Junction and Storage Temperature Range TJ, TSTG
-55 to 150

Thermal Characteristics FET1

Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
t 10s Steady-State Steady-State

Thermal Characteristics FET2

Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
t 10s Steady-State Steady-State

Max FET2 30 ±12 40 12 22
-55 to 150

Units V A

A mJ W °C

Units
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Datasheet ID: AO4924L 516199