AO4924 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
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AO4924L (pdf) |
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AO4924 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM The AO4924 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4924 is Pb-free meets ROHS & Sony 259 specifications . AO4924L is a Green Product ordering option. AO4924L and AO4924 are electrically identical. FET1 VDS V = 30V ID = 9A RDS ON < RDS ON < FET2 VDS V = 30V I D=7.3A VGS = 10V VGS = 10V VGS = 4.5V UIS TESTED! Rg,Ciss,Coss,Crss Tested SOIC-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SRFET TM Soft Recovery MOSFET Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max FET1 Drain-Source Voltage Gate-Source Voltage ±12 Continuous Drain TA=25°C Current A TA=70°C IDSM Pulsed Drain Current B Avalanche Current B Repetitive avalanche energy L=0.3mH B Power Dissipation TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics FET1 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t 10s Steady-State Steady-State Thermal Characteristics FET2 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t 10s Steady-State Steady-State Max FET2 30 ±12 40 12 22 -55 to 150 Units V A A mJ W °C Units |
More datasheets: 6551404103F | 6551304104F | 6551404104F | 6552404103F | 6551403104F | 6551304103F | 6551403103F | 6551303103F | 6551204104F | 6552403103F |
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