FQP1N60

FQP1N60 Datasheet

FQP1N60

Part	Datasheet
FQP1N60	FQP1N60 (pdf)

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QFET N-CHANNEL • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge 5.0nC Typ. • Extended Safe Operating Area • Lower RDS ON Typ. ABSOLUTE MAXIMUM RATINGS Symbol VDSS IDM VGS EAS IAR EAR dv/dt TJ, TSTG Characteristics Drain-to-Source Voltage Continuous Drain Current TC = 25°C Continuous Drain Current TC = 100°C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC = 25°C Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds THERMAL RESISTANCE Characteristics Junction-to-Case Case-to-Sink Junction-to-Ambient FQP1N60 BVDSS = 600V RDS ON = ID = 1.2A TO-220 Gate Drain Source Value 600 ±30 50 40 −55 to +150 Units V A V mJ A mJ V/ns W/°C Typ. − − Max. Units °C/W 1999 Fairchild Semiconductor Corporation FQP1N60 QFET N-CHANNEL ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise specified Symbol BVDSS VGS th IGSS IDSS Drain-to-Source Leakage Current RDS on

PDF Datasheet Preview

QFET N-CHANNEL
• Advanced New Design
• Avalanche Rugged Technology
• Rugged Gate Oxide Technology
• Very Low Intrinsic Capacitances
• Excellent Switching Characteristics
• Unrivalled Gate Charge 5.0nC Typ.
• Extended Safe Operating Area
• Lower RDS ON Typ.

ABSOLUTE MAXIMUM RATINGS

Symbol VDSS

IDM VGS EAS IAR EAR dv/dt

TJ, TSTG

Characteristics

Drain-to-Source Voltage

Continuous Drain Current TC = 25°C

Continuous Drain Current TC = 100°C

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC = 25°C Linear Derating Factor

Operating Junction and Storage Temperature Range

Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds

THERMAL RESISTANCE

Characteristics Junction-to-Case

Case-to-Sink Junction-to-Ambient

FQP1N60

BVDSS = 600V RDS ON = ID = 1.2A

TO-220

Gate Drain Source

Value 600 ±30 50 40
−55 to +150

Units V

A V mJ A mJ V/ns W/°C

Typ. − −

Max.

Units °C/W
1999 Fairchild Semiconductor Corporation

FQP1N60

QFET N-CHANNEL

ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise specified

Symbol BVDSS VGS th

IGSS

IDSS Drain-to-Source Leakage Current

RDS on

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Datasheet ID: FQP1N60 515300