FQD6P25TM

FQD6P25TM Datasheet

FQD6P25 / FQU6P25

Part	Datasheet
FQD6P25TM	FQD6P25TM (pdf)

Related Parts	Information
FQD6P25TF	FQD6P25TF
FQU6P25TU	FQU6P25TU

PDF Datasheet Preview
FQD6P25 / FQU6P25 FQD6P25 / FQU6P25 250V P-Channel MOSFET October 2008 These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. • -4.7A, -250V, RDS on = = -10 V • Low gate charge typical 21 nC • Low Crss typical 20 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant D-PAK FQD Series I-PAK FQU Series Absolute Maximum TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, case for 5 seconds FQD6P25 / FQU6P25 -250 540 55 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

PDF Datasheet Preview

FQD6P25 / FQU6P25

FQD6P25 / FQU6P25
250V P-Channel MOSFET

October 2008

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
• -4.7A, -250V, RDS on = = -10 V
• Low gate charge typical 21 nC
• Low Crss typical 20 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant

D-PAK

FQD Series

I-PAK

FQU Series

Absolute Maximum TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, case for 5 seconds

FQD6P25 / FQU6P25 -250 540 55
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

More datasheets: C180-2A | C180-1A | C180-10A | M-C180-5A | M-C180-3A | M-C180-13A | C180-13A | HFX245S10 | FDMS8660AS | FQD6P25TF

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FQD6P25TM Datasheet file may be downloaded here without warranties.

Datasheet ID: FQD6P25TM 515258