FDMS8660AS
FDMS8660AS Datasheet
FDMS8660AS N-Channel SyncFETTM
| Part | Datasheet |
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FDMS8660AS |
FDMS8660AS (pdf) |
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| FDMS8660AS N-Channel SyncFETTM May 2009 FDMS8660AS tm N-Channel 30V, 49A, 2.1m: - Max rDS on = 2.1m at VGS = 10V, ID = 28A - Max rDS on = 3.1m at VGS = 4.5V, ID = 22A - Advanced Package and Silicon combination for low rDS on and high efficiency - SyncFET Schottky Body Diode - MSL1 robust package design - RoHS Compliant The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. - Synchronous Rectifier for DC/DC Converters - Notebook Vcore/ GPU low side switch - Networking Point of Load low side switch - Telecom secondary side rectification Bottom Pin 1 Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 2 Note 1a Ratings 30 ±20 49 179 28 200 726 104 -55 to +150 Units V mJ W °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Device Marking FDMS8660AS Device FDMS8660AS Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000units 2009 Fairchild Semiconductor Corporation FDMS8660AS N-Channel SyncFETTM Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 10mA, referenced to 25°C mV/°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 10mA, referenced to 25°C mV/°C VGS = 10V, ID = 28A VGS = 4.5V, ID = 22A VGS = 10V, ID = 28A, TJ = 125°C VDD = 10V, ID = 28A Dynamic Characteristics Ciss Coss Crss Rg VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 4410 5865 pF 2305 3065 pF Switching Characteristics |
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