FQD6N60CTM
FQD6N60CTM Datasheet
FQD6N60C 600V N-Channel MOSFET
| Part | Datasheet |
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FQD6N60CTM |
FQD6N60CTM (pdf) |
| Related Parts | Information |
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FQD6N60CTM-WS |
FQD6N60CTM-WS |
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| FQD6N60C 600V N-Channel MOSFET FQD6N60C 600V N-Channel MOSFET • 4 A, 600 V, RDS on = VGS = 10 V • Low gate charge typical 16 nC • Low Crss typical 7 pF • Fast switching • 100 % avalanche tested • Improved dv/dt capability QFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D-PAK FQD Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount ● ● FQD6N60C 600 4 16 ± 30 300 80 -55 to +150 300 ---- 50 110 Package Marking and Ordering Information Device Marking FQD6N60C Device FQD6N60CTM FQD6N60CTF Package DPAK Reel Size 380mm Tape Width 16mm Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V On Characteristics VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = A VDS = 40 V, ID = A Note 4 Dynamic Characteristics Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = MHz Switching Characteristics td on tr td off tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 300 V, ID = A, RG = 25 Note 4, 5 VDS = 480 V, ID = A, VGS = 10 V Note 4, 5 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = A |
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