FQU6N40CTU
FQU6N40CTU Datasheet
FQD6N40C / FQU6N40C N-Channel MOSFET
| Part | Datasheet |
|---|---|
FQU6N40CTU |
FQU6N40CTU (pdf) |
| Related Parts | Information |
|---|---|
FQU6N40CTU_NBEA001 |
FQU6N40CTU_NBEA001 |
| PDF Datasheet Preview |
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| FQD6N40C / FQU6N40C N-Channel MOSFET FQD6N40C / FQU6N40C N-Channel QFET MOSFET 400 V, A, March 2013 This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts. • A, 400 V, RDS on = Max = 10 V, ID = A • Low Gate Charge Typ. 16 nC • Low Crss Typ. 15 pF • 100% Avalanche Tested D-PAK G S FQD Series I-PAK FQU Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQD6N40C / FQU6N40C 400 18 ± 30 270 48 -55 to +150 Unit V A V mJ A mJ V/ns W W/°C °C |
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