FQU6N40CTU_NBEA001

FQU6N40CTU_NBEA001 Datasheet


FQD6N40C / FQU6N40C N-Channel MOSFET

Part Datasheet
FQU6N40CTU_NBEA001 FQU6N40CTU_NBEA001 FQU6N40CTU_NBEA001 (pdf)
Related Parts Information
FQU6N40CTU FQU6N40CTU FQU6N40CTU
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FQD6N40C / FQU6N40C N-Channel MOSFET

FQD6N40C / FQU6N40C

N-Channel QFET MOSFET
400 V, A,

March 2013

This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts.
• A, 400 V, RDS on = Max = 10 V, ID = A
• Low Gate Charge Typ. 16 nC
• Low Crss Typ. 15 pF
• 100% Avalanche Tested

D-PAK

G S FQD Series

I-PAK

FQU Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQD6N40C / FQU6N40C 400 18 ± 30 270 48
-55 to +150

Unit V A V mJ A mJ

V/ns W

W/°C °C
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Datasheet ID: FQU6N40CTU_NBEA001 515256