FQD30N06TF_F080

FQD30N06TF_F080 Datasheet

FQD30N06 / FQU30N06

Part	Datasheet
FQD30N06TF_F080	FQD30N06TF_F080 (pdf)

Related Parts	Information
FQD30N06TF	FQD30N06TF

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FQD30N06 / FQU30N06 FQD30N06 / FQU30N06 60V N-Channel MOSFET January 2009 These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. • 22.7A, 60V, RDS on = VGS = 10V • Low gate charge typical 19 nC • Low Crss typical 40 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • 150oC maximum junction temperature rating • RoHS Compliant D-PAK FQD Series I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQD30N06 / FQU30N06 60 ± 25 280 44 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

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FQD30N06 / FQU30N06

FQD30N06 / FQU30N06
60V N-Channel MOSFET

January 2009

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
• 22.7A, 60V, RDS on = VGS = 10V
• Low gate charge typical 19 nC
• Low Crss typical 40 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150oC maximum junction temperature rating
• RoHS Compliant

D-PAK

FQD Series

I-PAK

FQU Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQD30N06 / FQU30N06 60 ± 25 280 44
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

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Datasheet ID: FQD30N06TF_F080 515237