FQI4N20LTU

FQI4N20LTU Datasheet


FQB4N20L / FQI4N20L

Part Datasheet
FQI4N20LTU FQI4N20LTU FQI4N20LTU (pdf)
Related Parts Information
FQB4N20LTM FQB4N20LTM FQB4N20LTM
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FQB4N20L / FQI4N20L

FQB4N20L / FQI4N20L
200V LOGIC N-Channel MOSFET

December 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
• 3.8A, 200V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
operation from logic drivers

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

FQB4N20L / FQI4N20L 200 ± 20 52 45
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics
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Datasheet ID: FQI4N20LTU 515105