FQU2N50BTU

FQU2N50BTU Datasheet

FQD2N50B / FQU2N50B

Part	Datasheet
FQU2N50BTU	FQU2N50BTU (pdf)

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FQD2N50B / FQU2N50B FQD2N50B / FQU2N50B 500V N-Channel MOSFET May 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. • 1.6A, 500V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D-PAK FQD Series I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQD2N50 / FQU2N50 500 ± 30 120 30 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

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FQD2N50B / FQU2N50B

FQD2N50B / FQU2N50B
500V N-Channel MOSFET

May 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
• 1.6A, 500V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D-PAK

FQD Series

I-PAK

FQU Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQD2N50 / FQU2N50 500 ± 30 120 30
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

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Datasheet ID: FQU2N50BTU 515234