FGA90N30DTU
FGA90N30DTU Datasheet
FGA90N30D 300V PDP IGBT
| Part | Datasheet |
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FGA90N30DTU |
FGA90N30DTU (pdf) |
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| FGA90N30D 300V PDP IGBT FGA90N30D 300V PDP IGBT • High Current Capability • Low saturation voltage VCE sat , Typ = IC = 20A • High Input Impedance September 2006 Employing Unified IGBT Technology, FGA90N30D provides low conduction and switching loss. FGA90N30D offers the optimum solution for PDP applications where low condution loss is essential. TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted VCES VGES IC ICM IF IFM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Note 1 Diode Continuous Forward Current Diode Maximum Forward Current TC = 25°C TC = 25°C TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 1 Repetitive test , pulse width = 100usec , Duty = * Ic_pulse limited by max Tj Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient FGA90N30D 300 ± 30 90 220 10 40 219 87 -55 to +150 -55 to +150 300 Typ. ---- Max. Units V A W °C °C °C Units °C/W °C/W °C/W 2006 Fairchild Semiconductor Corporation FGA90N30D 300V PDP IGBT Package Marking and Ordering Information Device Marking FGA90N30D Device FGA90N30D Package TO-3P Reel Size Tape Width Quantity Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage ICES IGES Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V On Characteristics VGE th G-E Threshold Voltage VCE sat Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 20A, VGE = 15V IC = 90A, VGE = 15V IC = 90A, VGE = 15V, TC = 125°C Dynamic Characteristics Cies Coes Cres VCE = 30V, VGE = 0V, f = 1MHz V/°C ± 250 1700 Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc |
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