FQD1N60TF

FQD1N60TF Datasheet


FQD1N60 / FQU1N60

Part Datasheet
FQD1N60TF FQD1N60TF FQD1N60TF (pdf)
Related Parts Information
FQU1N60TU FQU1N60TU FQU1N60TU
FQD1N60TM FQD1N60TM FQD1N60TM
PDF Datasheet Preview
FQD1N60 / FQU1N60

FQD1N60 / FQU1N60
600V N-Channel MOSFET

April 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
• 1.0A, 600V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D-PAK

FQD Series

I-PAK

FQU Series

Absolute Maximum TC = 25°C unless otherwise noted

Parameter

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, case for 5 seconds

FQD1N60 / FQU1N60 600 50 30
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount
More datasheets: PWRS440A | PWRS220A | 2676 | TR1/6125TD750MA | TR1/6125TD7A | 1469 | 70001937 | 70001938 | FQU1N60TU | FQD1N60TM


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Datasheet ID: FQD1N60TF 515230