FQU7P06TU_NB82048

FQU7P06TU_NB82048 Datasheet


FQD7P06 / FQU7P06

Part Datasheet
FQU7P06TU_NB82048 FQU7P06TU_NB82048 FQU7P06TU_NB82048 (pdf)
Related Parts Information
FQU7P06TU FQU7P06TU FQU7P06TU
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FQD7P06 / FQU7P06

FQD7P06 / FQU7P06
60V P-Channel MOSFET

May 2001

QFET TM

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
• -5.4A, -60V, RDS on = = -10 V
• Low gate charge typical nC
• Low Crss typical 25 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D-PAK

FQD Series

I-PAK

FQU Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
● ●

FQD7P06 / FQU7P06 -60 ± 25 90 28
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics
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Datasheet ID: FQU7P06TU_NB82048 515214