FQI7N10TU
FQI7N10TU Datasheet
FQB7N10 / FQI7N10
| Part | Datasheet |
|---|---|
FQI7N10TU |
FQI7N10TU (pdf) |
| Related Parts | Information |
|---|---|
FQB7N10TM |
FQB7N10TM |
| PDF Datasheet Preview |
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| FQB7N10 / FQI7N10 FQB7N10 / FQI7N10 100V N-Channel MOSFET December 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. • 7.3A, 100V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical 10 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQB7N10 / FQI7N10 100 ± 25 50 40 -55 to +175 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter |
| More datasheets: EP7311-CB | EP7311-CB-90 | EP7311-CV-90 | EP7311-IR | EP7311-IR-90 | EP7311-IV | EP7311-IV-90 | EP7311-CV | EP7311M-IBZ | FQB7N10TM |
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