FQB6N60TM

FQB6N60TM Datasheet


FQB6N60 / FQI6N60

Part Datasheet
FQB6N60TM FQB6N60TM FQB6N60TM (pdf)
Related Parts Information
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FQB6N50TM FQB6N50TM FQB6N50TM
PDF Datasheet Preview
FQB6N60 / FQI6N60

FQB6N60 / FQI6N60
600V N-Channel MOSFET

October 2008

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
• 6.2A, 600V, RDS on = = 10 V
• Low gate charge typical 20 nC
• Low Crss typical 10 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum TC = 25°C unless otherwise noted

Parameter

VDSS ID

IDM VGSS EAS IAR EAR dv/dt

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Note 1

Note 2 Note 1 Note 1 Note 3

Power Dissipation TA = 25°C *

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG TL

Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount

FQB6N60 / FQI6N60 600 440 13 130
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Units
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Datasheet ID: FQB6N60TM 515186