FQB6N50TM
FQB6N50TM Datasheet
FQB6N60 / FQI6N60
| Part | Datasheet |
|---|---|
FQB6N50TM |
FQB6N50TM (pdf) |
| Related Parts | Information |
|---|---|
FQI6N50TU |
FQI6N50TU |
|
FQB6N60TM |
FQB6N60TM |
| PDF Datasheet Preview |
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| FQB6N60 / FQI6N60 FQB6N60 / FQI6N60 600V N-Channel MOSFET October 2008 These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 6.2A, 600V, RDS on = = 10 V • Low gate charge typical 20 nC • Low Crss typical 10 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS Compliant D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum TC = 25°C unless otherwise noted Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount FQB6N60 / FQI6N60 600 440 13 130 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units |
| More datasheets: MPKA50B18 | PKJT70B14 | PKD70B1014 | PKJ70B14 | PKD100B1014 | MPKES60B18 | MPKES140B14 | PKX60B14 | MPKG50B14 | FQI6N50TU |
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