FQI5N80TU

FQI5N80TU Datasheet


FQB5N80 / FQI5N80

Part Datasheet
FQI5N80TU FQI5N80TU FQI5N80TU (pdf)
Related Parts Information
FQB5N80TM FQB5N80TM FQB5N80TM
PDF Datasheet Preview
FQB5N80 / FQI5N80

FQB5N80 / FQI5N80
800V N-Channel MOSFET

September 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
• 4.8A, 800V, RDS on = = 10 V
• Low gate charge typical 25 nC
• Low Crss typical 11 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount

FQB5N80 / FQI5N80 800 ± 30 590 14 140
More datasheets: B25620B1506K981 | B25620B267K881 | B25620B118K882 | B25620B1117K981 | B25620B407K881 | B25620B1267K101 | B25620B1357K101 | B25620B1237K101 | B25620B1187K321 | B25620B1177K101


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Datasheet ID: FQI5N80TU 515177