FQB5N80TM
FQB5N80TM Datasheet
FQB5N80 / FQI5N80
| Part | Datasheet |
|---|---|
FQB5N80TM |
FQB5N80TM (pdf) |
| Related Parts | Information |
|---|---|
FQI5N80TU |
FQI5N80TU |
| PDF Datasheet Preview |
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| FQB5N80 / FQI5N80 FQB5N80 / FQI5N80 800V N-Channel MOSFET September 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 4.8A, 800V, RDS on = = 10 V • Low gate charge typical 25 nC • Low Crss typical 11 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount FQB5N80 / FQI5N80 800 ± 30 590 14 140 |
| More datasheets: B25620B267K881 | B25620B118K882 | B25620B1117K981 | B25620B407K881 | B25620B1267K101 | B25620B1357K101 | B25620B1237K101 | B25620B1187K321 | B25620B1177K101 | FQI5N80TU |
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