FQB5N60CTM-WS

FQB5N60CTM-WS Datasheet

FQB5N60CTM_WS N-Channel MOSFET

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FQB5N60CTM-WS	FQB5N60CTM-WS (pdf)

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FQB5N60CTM_WS N-Channel MOSFET June 2015 FQB5N60CTM_WS N-Channel MOSFET 600 V, A, • A, 600 V, RDS on = Ω Max. = 10 V, ID = A • Low Gate Charge Typ. 15 nC • Low Crss Typ. pF • 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts. D2-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25°C - Derate Above 25°C Note 1 Note 2 Note 1 Note 1 Note 3 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds FQB5N60CTM_WS 600 18 ± 30 210 10 100 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient Minimum Pad of 2-oz Copper , Max. Thermal Resistance, Junction to Ambient 1 in2 Pad of 2-oz Copper , Max. FQB5N60CTM_WS 40 Unit V A V mJ A mJ V/ns W W/°C °C °C Unit oC/W 2003 Fairchild Semiconductor Corporation FQB5N60CTM_WS N-Channel MOSFET Package Marking and Ordering Information Part Number FQB5N60CTM_WS Top Mark FQB5N60CS Package D2-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 24 mm Quantity 800 units Electrical Characteristics TC = 25°C unless otherwise noted. Parameter Test Conditions Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF IGSSR VGS = 0 V, ID = 250 uA ID = 250 uA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V V/°C -100 On Characteristics VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 uA VGS = 10 V, ID = A VDS = 40 V, ID = A Dynamic Characteristics Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = MHz Switching Characteristics td on tr td off tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 300 V, ID = A, VGS = 10 V, RG = 25 Ω VDS = 480 V, ID = A, VGS = 10 V Note 4 Note 4 Drain-Source Diode Characteristics and Maximum Ratings

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FQB5N60CTM_WS N-Channel MOSFET

June 2015

FQB5N60CTM_WS

N-Channel MOSFET
600 V, A,
• A, 600 V, RDS on = Ω Max. = 10 V, ID = A
• Low Gate Charge Typ. 15 nC
• Low Crss Typ. pF
• 100% Avalanche Tested

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts.

D2-PAK

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current
- Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation TC = 25°C - Derate Above 25°C

Note 1

Note 2 Note 1 Note 1 Note 3

TJ, TSTG TL

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds

FQB5N60CTM_WS 600 18 ± 30 210 10 100
-55 to +150

Thermal Characteristics

Parameter Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient Minimum Pad of 2-oz Copper , Max. Thermal Resistance, Junction to Ambient 1 in2 Pad of 2-oz Copper , Max.

FQB5N60CTM_WS 40

Unit V A V mJ A mJ

V/ns W

W/°C °C °C

Unit
oC/W
2003 Fairchild Semiconductor Corporation

FQB5N60CTM_WS N-Channel MOSFET
Package Marking and Ordering Information

Part Number FQB5N60CTM_WS

Top Mark FQB5N60CS

Package D2-PAK

Packing Method Tape and Reel

Reel Size 330 mm

Tape Width 24 mm

Quantity 800 units

Electrical Characteristics TC = 25°C unless otherwise noted.

Parameter

Test Conditions

Max Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSSF IGSSR

VGS = 0 V, ID = 250 uA

ID = 250 uA, Referenced to 25°C

VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V

V/°C
-100

On Characteristics

VGS th RDS on

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

VDS = VGS, ID = 250 uA VGS = 10 V, ID = A VDS = 40 V, ID = A

Dynamic Characteristics

Ciss Coss Crss

VDS = 25 V, VGS = 0 V, f = MHz

Switching Characteristics
td on tr td off tf Qg Qgs Qgd

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

VDD = 300 V, ID = A, VGS = 10 V, RG = 25 Ω

VDS = 480 V, ID = A, VGS = 10 V

Note 4

Note 4

Drain-Source Diode Characteristics and Maximum Ratings

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Datasheet ID: FQB5N60CTM-WS 515176