FQB5N50CFTM
FQB5N50CFTM Datasheet
FQB5N50CF 500V N-Channel MOSFET
| Part | Datasheet |
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FQB5N50CFTM |
FQB5N50CFTM (pdf) |
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| FQB5N50CF 500V N-Channel MOSFET FQB5N50CF 500V N-Channel MOSFET • 5A, 500V, RDS on = = 10 V • Low gate charge typical 18nC • Low Crss typical 15pF • Fast switching • 100% avalanche tested • Improved dv/dt capability May 2006 FRFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D2-PAK FQB Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount 2006 Fairchild Semiconductor Corporation FQB5N50CF 500 5 20 ± 30 300 5 96 -55 to +150 300 Units V A V mJ A mJ V/ns W/°C °C Package Marking and Ordering Information Device Marking FQB5N50CF Device FQB5N50CFTM FQB5N50CFTF Package D2-PAK D2-PAK Reel Size 330mm Tape Width 24mm Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V IGSSR VGS = -30 V, VDS = 0 V On Characteristics VGS th Gate Threshold Voltage RDS on Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.5A VDS = 40 V, ID = A Note 4 Ciss Input Capacitance |
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