FQB55N06TM

FQB55N06TM Datasheet

FQB55N06 / FQI55N06

Part	Datasheet
FQB55N06TM	FQB55N06TM (pdf)

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FQB55N06 / FQI55N06 FQB55N06 / FQI55N06 60V N-Channel MOSFET May 2001 QFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. • 55A, 60V, RDS on = = 10 V • Low gate charge typical 35 nC • Low Crss typical 85 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQB55N06 / FQI55N06 60 55 220 ± 25 545 55 133 -55 to +175 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter

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FQB55N06 / FQI55N06

FQB55N06 / FQI55N06
60V N-Channel MOSFET

May 2001

QFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
• 55A, 60V, RDS on = = 10 V
• Low gate charge typical 35 nC
• Low Crss typical 85 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

FQB55N06 / FQI55N06 60 55 220 ± 25 545 55 133
-55 to +175

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter

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Datasheet ID: FQB55N06TM 515169