AT25DL081-MHN-Y

AT25DL081-MHN-Y Datasheet

Atmel AT25DL081 Preliminary

Part	Datasheet
AT25DL081-MHN-Y	AT25DL081-MHN-Y (pdf)

Related Parts	Information
AT25DL081-MHN-T	AT25DL081-MHN-T
AT25DL081-SSHN-T	AT25DL081-SSHN-T
AT25DL081-SSHN-B	AT25DL081-SSHN-B

PDF Datasheet Preview
• Single, 1.65V - 1.95V supply • Serial peripheral interface SPI compatible Supports SPI modes 0 and 3 Supports RapidS operation Supports dual-input program Supports dual-output read • Very high operating frequencies 100MHz for Atmel RapidS 85MHz for SPI 5ns maximum clock-to-output time tV • Flexible, optimized erase architecture for code-plus-data storage applications Uniform 4KB block erase Uniform 32KB block erase Uniform 64KB block erase Full chip erase • Individual sector protection with global protect/unprotect feature 16 sectors of 64KB each • Hardware controlled locking of protected sectors via WP pin • Sector lockdown with permanent freeze option Make any combination of 64KB sectors permanently read-only • 128-byte, one-time programmable OTP security register 64bytes factory preprogrammed, 64bytes user programmable • Flexible programming Byte/page program 1 to 256 bytes • Fast program and erase times 1.0ms typical page program 256 bytes time 50ms typical 4KB block erase time 250ms typical 32KB block erase time 400ms typical 64KB block erase time • Program and erase suspend/resume • Automatic checking and reporting of erase/program failures • Software controlled reset • JEDEC standard manufacturer and device ID read methodology • Low power dissipation 10mA active read current typical at 20MHz 8µA deep power-down current typical • Endurance 100,000 program/erase cycles • Data retention 20 years • Complies with full industrial temperature range • Industry standard green Pb/halide-free/RoHS-compliant package options 8-lead SOIC Wide Body 8-pad ultra thin DFN 5 x 6 x 0.6mm 8-ball dBGA WLCSP 8Mb, 1.65V Minimum, SPI, Serial Flash Memory with Dual-I/O Support Atmel AT25DL081 Preliminary The Atmel AT25DL081 is a serial interface flash memory device designed for use in a wide variety of high-volume, consumer-based applications in which program code is shadowed from flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DL081, with its erase granularity as small as 4KB, makes it ideal for data storage, too, eliminating the need for additional data storage EEPROM devices. The physical sectoring and the erase block sizes of the AT25DL081 have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added, while still maintaining the same overall device density. The AT25DL081 also offers a sophisticated method for protecting individual sectors against erroneous or malicious program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. In addition to individual sector protection capabilities, the AT25DL081 incorporates global protect and global unprotect features that allow the entire memory array to be either protected or unprotected all at once. This reduces overhead during the manufacturing process, because sectors do not have to be unprotected one by one prior to initial programming. To take code and data protection to the next level, the AT25DL081 incorporates a sector lockdown mechanism that allows any combination of individual 64KB sectors to be locked down and become permanently read-only. This addresses the need of certain secure applications that require portions of the flash memory array to be permanently protected again st malicious attempts at altering program code, data modules, security information, or encryption/decryption algorithms, keys, and routines. The device also contains a specialized, OTP one-time programmable security register, which can be used for unique device serialization, system-level electronic serial number ESN storage, locked key storage, or other purposes. Specifically designed for use in 1.8V systems, the AT25DL081 supports read, program, and erase operations with a supply voltage range of 1.65V to 1.95V. No separate voltage is required for programming and erasing. Atmel AT25DL081 [Preliminary] Ordering Information Ordering Code Detail Atmel Designator Product Family Device Density 08 = 8-megabit Interface 1 = Serial Shipping Carrier Option B = Bulk tubes Y = Bulk trays T = Tape and reel Operating Voltage N = 1.65V minimum 1.65V to 1.95V Device Grade H = Green, NiPdAu lead finish, industrial temperature range to +85°C U = Green, Matte Sn or Sn alloy, industrial temperature range to +85°C Package Option SS = 8-lead, wide SOIC M = 8-pad, 5 x 6 x 0.6mm UDFN U = 8-ball dBGA WLCSP Green Package Options Pb/halide-free/RoHS-compliant Atmel Ordering Codes AT25DL081-MHN-Y 1 AT25DL081-MHN-T 1 AT25DL081-SSHN-B 1 AT25DL081-SSHN-T 1 AT25DL081-UUN-T 1 Package 8MA1 Lead Pad Finish Operating Voltage NiPdAu SnAgCu 1.65V to 1.95V Notes The shipping carrier option code is not marked on the devices Please contact Atmel for 8-ball dBGA package outline drawing Max. Freq. MHz 100 Operation Range Industrial -40°C to +85°C 8MA1 8S1 Package Type 8-pad 5 x 6 x 0.6mm body , thermally enhanced, plastic, ultra thin, dual, flat, no-lead package UDFN 8-lead 0.150"-wide, plastic, gull wing, small outline package JEDEC SOIC 46 Atmel AT25DL081 [Preliminary] Packaging Information 8MA1 UDFN Atmel AT25DL081 [Preliminary] Pin 1 ID D SIDE VIEW y TOP VIEW Pin #1 Notch R Option B BOTTOM VIEW Option A Pin #1 Chamfer C SYMBOL A A1 b C D D2 E E2 e L y K COMMON DIMENSIONS Unit of Measure = mm MIN NOM MAX NOTE Package Drawing Contact: TITLE 8MA1, 8-pad 5 x 6 x mm Body , Thermally Enhanced Plastic Ultra Thin Dual Flat No Lead Package UDFN 8MA1 8S1 JEDEC SOIC TOP VIEW SIDE VIEW Notes This drawing is for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc. END VIEW COMMON DIMENSIONS Unit of Measure = mm SYMBOL MIN NOTE

PDF Datasheet Preview

• Single, 1.65V - 1.95V supply
• Serial peripheral interface SPI compatible

Supports SPI modes 0 and 3 Supports RapidS operation

Supports dual-input program

Supports dual-output read
• Very high operating frequencies
100MHz for Atmel RapidS
85MHz for SPI
5ns maximum clock-to-output time tV
• Flexible, optimized erase architecture for code-plus-data storage applications

Uniform 4KB block erase

Uniform 32KB block erase

Uniform 64KB block erase

Full chip erase
• Individual sector protection with global protect/unprotect feature
16 sectors of 64KB each
• Hardware controlled locking of protected sectors via WP pin
• Sector lockdown with permanent freeze option

Make any combination of 64KB sectors permanently read-only
• 128-byte, one-time programmable OTP security register
64bytes factory preprogrammed, 64bytes user programmable
• Flexible programming

Byte/page program 1 to 256 bytes
• Fast program and erase times
1.0ms typical page program 256 bytes time
50ms typical 4KB block erase time
250ms typical 32KB block erase time
400ms typical 64KB block erase time
• Program and erase suspend/resume
• Automatic checking and reporting of erase/program failures
• Software controlled reset
• JEDEC standard manufacturer and device ID read methodology
• Low power dissipation
10mA active read current typical at 20MHz
8µA deep power-down current typical
• Endurance 100,000 program/erase cycles
• Data retention 20 years
• Complies with full industrial temperature range
• Industry standard green Pb/halide-free/RoHS-compliant package options
8-lead SOIC Wide Body
8-pad ultra thin DFN 5 x 6 x 0.6mm
8-ball dBGA WLCSP
8Mb, 1.65V Minimum, SPI, Serial Flash Memory with Dual-I/O Support

Atmel AT25DL081 Preliminary

The Atmel AT25DL081 is a serial interface flash memory device designed for use in a wide variety of high-volume, consumer-based applications in which program code is shadowed from flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DL081, with its erase granularity as small as 4KB, makes it ideal for data storage, too, eliminating the need for additional data storage EEPROM devices.

The physical sectoring and the erase block sizes of the AT25DL081 have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added, while still maintaining the same overall device density.

The AT25DL081 also offers a sophisticated method for protecting individual sectors against erroneous or malicious program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. In addition to individual sector protection capabilities, the AT25DL081 incorporates global protect and global unprotect features that allow the entire memory array to be either protected or unprotected all at once. This reduces overhead during the manufacturing process, because sectors do not have to be unprotected one by one prior to initial programming.

To take code and data protection to the next level, the AT25DL081 incorporates a sector lockdown mechanism that allows any combination of individual 64KB sectors to be locked down and become permanently read-only. This addresses the need of certain secure applications that require portions of the flash memory array to be permanently protected again st malicious attempts at altering program code, data modules, security information, or encryption/decryption algorithms, keys, and routines. The device also contains a specialized, OTP one-time programmable security register, which can be used for unique device serialization, system-level electronic serial number ESN storage, locked key storage, or other purposes.

Specifically designed for use in 1.8V systems, the AT25DL081 supports read, program, and erase operations with a supply voltage range of 1.65V to 1.95V. No separate voltage is required for programming and erasing.

Atmel AT25DL081 [Preliminary]
Ordering Information
Ordering Code Detail

Atmel Designator

Product Family

Device Density
08 = 8-megabit

Interface
1 = Serial

Shipping Carrier Option

B = Bulk tubes Y = Bulk trays T = Tape and reel

Operating Voltage

N = 1.65V minimum 1.65V to 1.95V

Device Grade

H = Green, NiPdAu lead finish, industrial temperature range to +85°C

U = Green, Matte Sn or Sn alloy, industrial temperature range to +85°C

Package Option

SS = 8-lead, wide SOIC M = 8-pad, 5 x 6 x 0.6mm UDFN U = 8-ball dBGA WLCSP

Green Package Options Pb/halide-free/RoHS-compliant
Atmel Ordering Codes

AT25DL081-MHN-Y 1 AT25DL081-MHN-T 1

AT25DL081-SSHN-B 1 AT25DL081-SSHN-T 1

AT25DL081-UUN-T 1

Package 8MA1

Lead Pad Finish Operating Voltage

NiPdAu SnAgCu
1.65V to 1.95V

Notes The shipping carrier option code is not marked on the devices Please contact Atmel for 8-ball dBGA package outline drawing

Max. Freq. MHz 100

Operation Range

Industrial -40°C to +85°C
8MA1 8S1

Package Type 8-pad 5 x 6 x 0.6mm body , thermally enhanced, plastic, ultra thin, dual, flat, no-lead package UDFN 8-lead 0.150"-wide, plastic, gull wing, small outline package JEDEC SOIC
46 Atmel AT25DL081 [Preliminary]

Packaging Information
8MA1 UDFN

Atmel AT25DL081 [Preliminary]

Pin 1 ID D

SIDE VIEW y

TOP VIEW

Pin #1 Notch R

Option B

BOTTOM VIEW

Option A

Pin #1 Chamfer C

SYMBOL A A1 b C D D2 E E2 e L y K

COMMON DIMENSIONS Unit of Measure = mm

MIN NOM MAX

NOTE

Package Drawing Contact:

TITLE 8MA1, 8-pad 5 x 6 x mm Body , Thermally Enhanced Plastic Ultra Thin Dual Flat No Lead Package UDFN
8MA1
8S1 JEDEC SOIC

TOP VIEW

SIDE VIEW

Notes This drawing is for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.

END VIEW

COMMON DIMENSIONS Unit of Measure = mm

SYMBOL MIN

NOTE

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Datasheet ID: AT25DL081-MHN-Y 518907