FQB3N80 / FQI3N80
Part | Datasheet |
---|---|
![]() |
FQI3N80TU (pdf) |
PDF Datasheet Preview |
---|
FQB3N80 / FQI3N80 FQB3N80 / FQI3N80 800V N-Channel MOSFET September 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 3.0A, 800V, RDS on = = 10 V • Low gate charge typical 15 nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount FQB3N80 / FQI3N80 800 12 ± 30 320 107 |
More datasheets: FEB179 | FEB178 | EPS-AT91SAM7JTAG-BUNDLE | U643B-MFPG3Y | U643B-MFPY | U643B-MY | EA8848 | ACT8848QM201-T | ACT8848QM144-T | ACT8848QM135-T |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FQI3N80TU Datasheet file may be downloaded here without warranties.