FQB2N60 / FQI2N60
Part | Datasheet |
---|---|
![]() |
FQB2N60TM (pdf) |
PDF Datasheet Preview |
---|
FQB2N60 / FQI2N60 FQB2N60 / FQI2N60 600V N-Channel MOSFET April 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 2.4A, 600V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum TC = 25°C unless otherwise noted Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount FQB2N60 / FQI2N60 600 140 64 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C |
More datasheets: SFS-250 BK | SFS-450 | A000024 | KNF32200-W3 | KNF32100-W3 | KNF32050-W3 | KNF32025-W3 | FQPF1N60 | FQPF1N60T | ADNS-2700 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FQB2N60TM Datasheet file may be downloaded here without warranties.