FQB19N10LTM

FQB19N10LTM Datasheet

FQB19N10L / FQI19N10L

Part	Datasheet
FQB19N10LTM	FQB19N10LTM (pdf)

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FQB19N10L / FQI19N10L FQB19N10L / FQI19N10L 100V LOGIC N-Channel MOSFET August 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. • 19A, 100V, RDS on = = 10 V • Low gate charge typical 14 nC • Low Crss typical 35 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds FQB19N10L / FQI19N10L 100 19 76 ± 20 220 19 75 -55 to +175 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter

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FQB19N10L / FQI19N10L

FQB19N10L / FQI19N10L
100V LOGIC N-Channel MOSFET

August 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.
• 19A, 100V, RDS on = = 10 V
• Low gate charge typical 14 nC
• Low Crss typical 35 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds

FQB19N10L / FQI19N10L 100 19 76 ± 20 220 19 75
-55 to +175

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter

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Datasheet ID: FQB19N10LTM 515138