FQB16N25CTM

FQB16N25CTM Datasheet

FQB16N25C/FQI16N25C 250V N-Channel MOSFET

Part	Datasheet
FQB16N25CTM	FQB16N25CTM (pdf)

Related Parts	Information
FQI16N25CTU	FQI16N25CTU

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FQB16N25C/FQI16N25C 250V N-Channel MOSFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET • 15.6A, 250V, RDS on = = 10 V • Low gate charge typical 41nC • Low Crss typical 68pF • Fast switching • 100% avalanche tested • Improved dv/dt capability June 2006 QFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Note 1 Note 2 Note 1 Note 1 Note 3 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds FQB16N25C / FQI16N25C 250 ± 30 410 139 -55 to +150 300 Units V A V mJ A mJ V/ns W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient * When mounted on the minimum pad size recommended PCB Mount FQB16N25C / FQI16N25C Package Marking and Ordering Information Device Marking FQB16N25C FQI16N25C Device FQB16N25CTM FQI16N25CTU Package D2-PAK I2-PAK Reel Size 330mm -- Tape Width 24mm -- Quantity 800 50 Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V IGSSR VGS = -30 V, VDS = 0 V On Characteristics VGS th Gate Threshold Voltage RDS on Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VDS = VGS, ID = 250 µA VGS = 10 V, ID = 7.8A VDS = 40 V, ID = A Note 4 Ciss

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FQB16N25C/FQI16N25C 250V N-Channel MOSFET

FQB16N25C/FQI16N25C
250V N-Channel MOSFET
• 15.6A, 250V, RDS on = = 10 V
• Low gate charge typical 41nC
• Low Crss typical 68pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

June 2006

QFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

D2-PAK

FQB Series

I2-PAK

FQI Series

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation TA = 25°C *

Power Dissipation TC = 25°C - Derate above 25°C

Note 1

Note 2 Note 1 Note 1 Note 3

TJ, TSTG TL

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, from case for 5 seconds

FQB16N25C / FQI16N25C
250 ± 30 410 139 -55 to +150 300

Units

V A V mJ A mJ V/ns W/°C °C

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended PCB Mount

FQB16N25C / FQI16N25C
Package Marking and Ordering Information

Device Marking

FQB16N25C FQI16N25C

Device

FQB16N25CTM FQI16N25CTU

Package

D2-PAK I2-PAK

Reel Size
330mm --

Tape Width
24mm --

Quantity
800 50

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 250 V, VGS = 0 V

VDS = 200 V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

IGSSR

VGS = -30 V, VDS = 0 V

On Characteristics

VGS th

Gate Threshold Voltage

RDS on

Static Drain-Source On-Resistance

Forward Transconductance

Dynamic Characteristics

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 7.8A

VDS = 40 V, ID = A Note 4

Ciss

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Datasheet ID: FQB16N25CTM 515132