FQI2NA90TU
FQI2NA90TU Datasheet
FQB2NA90 / FQI2NA90
| Part | Datasheet |
|---|---|
FQI2NA90TU |
FQI2NA90TU (pdf) |
| Related Parts | Information |
|---|---|
FQB2NA90TM |
FQB2NA90TM |
| PDF Datasheet Preview |
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| FQB2NA90 / FQI2NA90 FQB2NA90 / FQI2NA90 900V N-Channel MOSFET September 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 2.8A, 900V, RDS on = VGS = 10 V • Low gate charge typical 15 nC • Low Crss typical pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D2-PAK FQB Series I2-PAK FQI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQB2NA90 / FQI2NA90 900 ± 30 310 107 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter |
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