FQAF19N60

FQAF19N60 Datasheet

FQAF19N60

Part	Datasheet
FQAF19N60	FQAF19N60 (pdf)

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FQAF19N60 FQAF19N60 600V N-Channel MOSFET April 2000 QFETTM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. • 11.2A, 600V, RDS on = VGS = 10 V • Low gate charge typical 70 nC • Low Crss typical 35 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-3PF FQAF Series Absolute Maximum TC = 25°C unless otherwise noted Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 TJ, TSTG TL Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FQAF19N60 600 1150 12 120 -55 to +150 Units V A V mJ A mJ W/°C °C Units 2000 Fairchild Semiconductor International FQAF19N60 Electrical = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage

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FQAF19N60

FQAF19N60
600V N-Channel MOSFET

April 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
• 11.2A, 600V, RDS on = VGS = 10 V
• Low gate charge typical 70 nC
• Low Crss typical 35 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-3PF

FQAF Series

Absolute Maximum TC = 25°C unless otherwise noted

Parameter

VDSS ID

IDM VGSS EAS IAR EAR dv/dt

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Note 1

Note 2 Note 1 Note 1 Note 3

TJ, TSTG TL

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FQAF19N60 600 1150 12 120
-55 to +150

Units V A V mJ A mJ

W/°C °C

Units
2000 Fairchild Semiconductor International

FQAF19N60

Electrical = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage

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Datasheet ID: FQAF19N60 515073