FQA46N15_F109

FQA46N15_F109 Datasheet

FQA46N15 / FQA46N15_F109 N-Channel MOSFET

Part	Datasheet
FQA46N15_F109	FQA46N15_F109 (pdf)

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FQA46N15 / FQA46N15_F109 N-Channel MOSFET FQA46N15 / FQA46N15_F109 N-Channel QFET MOSFET 150 V, 50 A, 42 mΩ March 2013 This N-Channel produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • 50 A, 150 V, RDS on = 42 mΩ Max = 10 V, ID = 25 A • Low Gate Charge Typ. 85 nC • Low Crss Typ. 100 pF • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating TO-3PN FQA Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, from case for 5 seconds FQA46N15 150 50 200 ± 25 650 50 25 250 -55 to +175 Thermal Characteristics Package Marking and Ordering Information Device Marking Device FQA46N15 FQA46N15 FQA46N15 FQA46N15_F109 Package TO-3PN TO-3PN Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 150 V, VGS = 0 V VDS = 120 V, TC = 150°C IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V IGSSR VGS = -25 V, VDS = 0 V On Characteristics VGS th Gate Threshold Voltage RDS on Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VDS = VGS, ID = 250 µA VGS = 10 V, ID = 25A VDS = 40 V, ID = 25A Note 4 Ciss Input Capacitance Coss

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FQA46N15 / FQA46N15_F109 N-Channel MOSFET

FQA46N15 / FQA46N15_F109

N-Channel QFET MOSFET
150 V, 50 A, 42 mΩ

March 2013

This N-Channel produced using
planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
• 50 A, 150 V, RDS on = 42 mΩ Max = 10 V, ID = 25 A
• Low Gate Charge Typ. 85 nC
• Low Crss Typ. 100 pF
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

TO-3PN

FQA Series

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, from case for 5 seconds

FQA46N15
150 50 200 ± 25 650 50 25 250 -55 to +175

Thermal Characteristics
Package Marking and Ordering Information

Device Marking Device

FQA46N15

FQA46N15

FQA46N15

FQA46N15_F109

Package

TO-3PN TO-3PN

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 150 V, VGS = 0 V

VDS = 120 V, TC = 150°C

IGSSF

Gate-Body Leakage Current, Forward

VGS = 25 V, VDS = 0 V

IGSSR

VGS = -25 V, VDS = 0 V

On Characteristics

VGS th

Gate Threshold Voltage

RDS on

Static Drain-Source On-Resistance

Forward Transconductance

Dynamic Characteristics

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 25A

VDS = 40 V, ID = 25A Note 4

Ciss

Input Capacitance

Coss

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Datasheet ID: FQA46N15_F109 515029