FQA13N50CF_F109

FQA13N50CF_F109 Datasheet

FQA13N50CF N-Channel MOSFET

Part	Datasheet
FQA13N50CF_F109	FQA13N50CF_F109 (pdf)

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FQA13N50CF N-Channel MOSFET FQA13N50CF N-Channel MOSFET 500 V, 15 A, 48 April 2013 • 15 A, 500 V, RDS on = 48 Max. VGS = 10 V, ID = A • Low Gate Charge Typ. 43 nC • Low Crss Typ. 20 pF • 100% Avalanche Tested • Fast Recovery Body Diode Typ. 100 ns This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts. TO-3PN Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Case-to-Sink, Typ. Thermal Resistance, Junction-to-Ambient, Max. FQA13N50CF 500 15 60 ± 30 860 15 218 -55 to +150 300 FQA13N50CF Unit V A V mJ A mJ V/ns W/°C °C Unit °C/W °C/W °C/W Package Marking and Ordering Information Device Marking Device FQA13N50CF FQA13N50CF FQA13N50CF FQA13N50CF_F109 Package TO-3PN TO-3PN Reel Size Tape Width Quantity Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V IGSSR VGS = -30 V, VDS = 0 V On Characteristics VGS th Gate Threshold Voltage RDS on Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VDS = VGS, ID = 250 µA VGS = 10 V, ID = 7.5A VDS = 40 V, ID = A Note 4 Ciss Input Capacitance Coss

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FQA13N50CF N-Channel MOSFET

FQA13N50CF

N-Channel MOSFET
500 V, 15 A, 48

April 2013
• 15 A, 500 V, RDS on = 48 Max. VGS = 10 V, ID = A
• Low Gate Charge Typ. 43 nC
• Low Crss Typ. 20 pF
• 100% Avalanche Tested
• Fast Recovery Body Diode Typ. 100 ns

This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts.

TO-3PN

Absolute Maximum Ratings

VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Case-to-Sink, Typ. Thermal Resistance, Junction-to-Ambient, Max.

FQA13N50CF
500 15 60 ± 30 860 15 218 -55 to +150 300

FQA13N50CF

Unit

V A V mJ A mJ V/ns W/°C °C

Unit
°C/W °C/W °C/W
Package Marking and Ordering Information

Device Marking

Device

FQA13N50CF

FQA13N50CF

FQA13N50CF FQA13N50CF_F109

Package

TO-3PN TO-3PN

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V

VDS = 400 V, TC = 125°C

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

IGSSR

VGS = -30 V, VDS = 0 V

On Characteristics

VGS th

Gate Threshold Voltage

RDS on

Static Drain-Source On-Resistance

Forward Transconductance

Dynamic Characteristics

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 7.5A

VDS = 40 V, ID = A Note 4

Ciss

Input Capacitance

Coss

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Datasheet ID: FQA13N50CF_F109 515002