FPNH10

FPNH10 Datasheet

FPNH10

Part	Datasheet
FPNH10	FPNH10 (pdf)

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FPNH10 FPNH10 TO-92 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Device mounted on FR-4 PCB X FPNH10 350 125 Units V mA °C Units mW/°C °C/W °C/W 2000 Fairchild Semiconductor Corporation FPNH10 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions NPN RF Transistor continued Min Max Units

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FPNH10

FPNH10

TO-92

NPN RF Transistor

This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current - Continuous

TJ, Tstg

Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB X

FPNH10 350 125

Units

V mA °C

Units
mW/°C °C/W °C/W
2000 Fairchild Semiconductor Corporation

FPNH10

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

NPN RF Transistor
continued

Min Max Units

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Datasheet ID: FPNH10 514989