FPN630 / FPN630A
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FPN630 (pdf) |
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FPN630A |
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FPN630 / FPN630A FPN630 FPN630A TO-226 PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to A continuous. Sourced from Process PC. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 30 35 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3 All voltages V and currents A are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient FPN630 / FPN630A 50 125 Units V A °C Units W °C/W °C/W 1999 Fairchild Semiconductor Corporation FPN630 / FPN630A PNP Low Saturation Transistor continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current |
More datasheets: RSL116061 | RSE116683 | RSE116671 | RSE116679 | RSE116677 | RSE116667 | RSL116089 | RSE116673 | RSL116053 | JN2UOANAGXJNTAMWHT |
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