FOD3181S

FOD3181S Datasheet

FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler

Part	Datasheet
FOD3181S	FOD3181S (pdf)

Related Parts	Information
FOD3181	FOD3181
FOD3181SDV	FOD3181SDV
FOD3181SD	FOD3181SD
FOD3181SV	FOD3181SV
FOD3181T	FOD3181T
FOD3181TV	FOD3181TV
FOD3181V	FOD3181V

PDF Datasheet Preview
FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler August 2008 FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler • Guaranteed operating temperature range of -20°C to +85°C • 0.5A minimum peak output current • High speed response 500ns max propagation delay over temperature range • Wide VCC operating range 10V to 20V • 5000Vrms, 1 minute isolation • Minimum creepage distance of 7.0mm • Minimum clearance distance of 7.0mm • C-UL, UL and VDE* approved • 10kV/µs minimum common mode rejection CMR at VCM = 1,500V • RDS ON of typ. offers lower power dissipation • Plasma Display Panel • High performance DC/DC convertor • High performance switch mode power supply • High performance uninterruptible power supply • Isolated Power MOSFET gate drive *Requires ‘V’ ordering option The FOD3181 is a 0.5A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a gallium aluminum arsenide AlGaAs light emitting diode optically coupled to a CMOS integrated circuit with a power stage. The power stage consists of a PMOS pullup and a NMOS pull-down power transistor. It is ideally suited for high frequency driving of MOSFETs used in Plasma Display Panels PDPs , motor control invertor applications, and high performance DC/DC converters. The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance. Functional Block Diagram Package Outlines NO CONNECTION 1 FOD3181 8 VCC ANODE 2 CATHODE 3 NO CONNECTION 4 7 OUTPUT 6 OUTPUT 5 VEE Note A 0.1µF bypass capacitor must be connected between pins 5 and FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TSTG TOPR TJ TSOL IF AVG IF tr IF TRAN VR IOH PEAK IOL PEAK VCC VEE VO PEAK PO PD Value -40 to +125 -20 to +85 -20 to +125 260 for 10 sec. 25 250 5 to 25 0 to VCC 250 300 Units °C °C °C °C mA ns A V A V mW Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. VCC VEE IF ON VF OFF TOPR Parameter Power Supply Input Current ON Input Voltage OFF Operating Temperature Value 10 to 20 12 to 18 0 to -20 to +85 Units V mA V °C 2003 Fairchild Semiconductor Corporation FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Electrical-Optical Characteristics DC TA = -20°C to +70°C Over recommended operating conditions unless otherwise Symbol IOH IOL VOH VOL ICCH ICCL IFLH VFHL BVR CIN Parameter Test Conditions Min. High Level Output Current 2 3 Low Level Output Current 2 3 High Level Output Voltage 5 6 Low Level Output Voltage 5 6 High Level Supply Current Low Level Supply Current Threshold Input Current Low to High Threshold Input Voltage High to Low Input Forward Voltage Temperature of Forward Voltage VOH = VCC VEE 1V VOL = VCC VEE 1V IO = -100mA IO = 100mA Output Open IF = 7 to 10mA Output Open VF = 0 to 0.8V IO = 0mA, VO > 5V IO = 0mA, VO < 0.5V IF = 10mA IF = 10mA Ordering Information Option No option S SD T V TV SV SDV Order Entry Example FOD3181 FOD3181S FOD3181SD FOD3181T FOD3181V FOD3181TV FOD3181SV FOD3181SDV Standard Through Hole Device Surface Mount, Lead Bend Surface Mount, Tape and Reel Lead Spacing VDE 0884 VDE 0884, Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel Marking Information 3181 2 V XX YY B 6 1 Fairchild logo 2 Device number 3 VDE mark Note Only appears on parts ordered with VDE option See order entry table 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code 2003 Fairchild Semiconductor Corporation FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Carrier Tape Specifications A0 B0 User Direction of Feed Symbol W t P0 D0 E F P2 P A0 B0 K0 W1 d Description Tape Width Tape Thickness Sprocket Hole Pitch Sprocket Hole Diameter Sprocket Hole Location Pocket Location Pocket Pitch Pocket Dimensions Cover Tape Width Cover Tape Thickness Max. Component Rotation or Tilt Min. Bending Radius Dimension in mm ± ± ± ± ± ± ± ± ± max 10° 30 2003 Fairchild Semiconductor Corporation FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Reflow Profile Temperature °C 245 C, s 260 C peak Time above 183C, <160 sec Ramp up = 0 1 2 3 4 Time Minute • Peak reflow temperature 260 C package surface temperature • Time of temperature higher than 183 C for 160 seconds or less • One time soldering reflow is recommended Output Power Derating The maximum package power dissipation is 295mW. The package is limited to this level to ensure that under normal operating conditions and over extended temperature range that the semiconductor junction temperatures do not exceed 125°C. The package power is composed of three elements the LED, static operating power of the output IC, and the power dissipated in the output power MOSFET transistors. The power rating of the output IC is 250mW. This power is divided between the static power of the integrated circuit, which is the product of IDD times the power supply voltage VDD VEE . The maximum IC static output power is 150mW, VDD VEE = 25V, IDD = 6mA. This maximum condition is valid over the operational temperature range of -40°C to +100°C. Under these maximum operating conditions, the output of the power MOSFET is allowed to dissipate 100mW of power. The absolute maximum output power dissipation versus ambient temperature is shown in Figure The output driver is capable of supplying 100mW of output power over the temperature range from -40°C to 87°C. The output derates to 90mW at the absolute maximum operating temperature of 100°C. Fig. 12 Absolute Maximum Power Dissipation vs. Ambient Temperature VDD VEE = Max. = 25V IDD = 6mA LED Power = 45mW The output power is the product of the average output current squared times the output transistor’s RDS ON : PO AVG = IO AVG 2 • RDS ON The IO AVG is the product of the duty factor times the peak current flowing in the output. The duty factor is the ratio of the ‘on’ time of the output load current divided by the period of the operating frequency. An RDS ON of results in an average output load current of 200mA. The load duty factor is a ratio of the average output time of the power MOSFET load circuit and period of the driving frequency. The maximum permissible, operating frequency is determined by the load supplied to the output at its resulting output pulse width. Figure 13 shows an example of a 0.03µF gate to source capacitance with a series resistance of This reactive load results in a composite average pulse width of 1.5µs. Under this load condition it is not necessary to derate the absolute maximum output current out to 250kHz.

PDF Datasheet Preview

FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler

August 2008

FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
• Guaranteed operating temperature range of -20°C to +85°C
• 0.5A minimum peak output current
• High speed response 500ns max propagation delay
over temperature range
• Wide VCC operating range 10V to 20V
• 5000Vrms, 1 minute isolation
• Minimum creepage distance of 7.0mm
• Minimum clearance distance of 7.0mm
• C-UL, UL and VDE* approved
• 10kV/µs minimum common mode rejection CMR at

VCM = 1,500V
• RDS ON of typ. offers lower power dissipation
• Plasma Display Panel
• High performance DC/DC convertor
• High performance switch mode power supply
• High performance uninterruptible power supply
• Isolated Power MOSFET gate drive
*Requires ‘V’ ordering option

The FOD3181 is a 0.5A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a gallium aluminum arsenide AlGaAs light emitting diode optically coupled to a CMOS integrated circuit with a power stage. The power stage consists of a PMOS pullup and a NMOS pull-down power transistor. It is ideally suited for high frequency driving of MOSFETs used in Plasma Display Panels PDPs , motor control invertor applications, and high performance DC/DC converters.

The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance.

Functional Block Diagram

Package Outlines

NO CONNECTION 1

FOD3181
8 VCC

ANODE 2 CATHODE 3 NO CONNECTION 4
7 OUTPUT 6 OUTPUT 5 VEE

Note A 0.1µF bypass capacitor must be connected between pins 5 and

FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.

TSTG TOPR

TJ TSOL IF AVG IF tr IF TRAN VR IOH PEAK IOL PEAK VCC VEE VO PEAK PO PD

Value -40 to +125 -20 to +85 -20 to +125 260 for 10 sec.
25 250
5 to 25 0 to VCC 250 300

Units °C °C °C °C mA ns A V A V mW

Recommended Operating Conditions

The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings.

VCC VEE IF ON VF OFF TOPR

Parameter Power Supply Input Current ON Input Voltage OFF Operating Temperature

Value 10 to 20 12 to 18 0 to -20 to +85

Units V mA V °C
2003 Fairchild Semiconductor Corporation

FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler

Electrical-Optical Characteristics DC TA = -20°C to +70°C

Over recommended operating conditions unless otherwise

Symbol IOH IOL VOH VOL ICCH

ICCL

IFLH VFHL

BVR CIN

Parameter

Test Conditions

Min.

High Level Output Current 2 3 Low Level Output Current 2 3 High Level Output Voltage 5 6 Low Level Output Voltage 5 6 High Level Supply Current

Low Level Supply Current

Threshold Input Current Low to High Threshold Input Voltage High to Low Input Forward Voltage Temperature of Forward Voltage

VOH = VCC VEE 1V VOL = VCC VEE 1V IO = -100mA IO = 100mA Output Open IF = 7 to 10mA Output Open VF = 0 to 0.8V IO = 0mA, VO > 5V IO = 0mA, VO < 0.5V IF = 10mA IF = 10mA
Ordering Information

Option No option

S SD T V TV SV SDV

Order Entry Example

FOD3181 FOD3181S FOD3181SD FOD3181T FOD3181V FOD3181TV FOD3181SV FOD3181SDV

Standard Through Hole Device Surface Mount, Lead Bend Surface Mount, Tape and Reel Lead Spacing VDE 0884 VDE 0884, Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel

Marking Information
3181 2 V XX YY B 6
1 Fairchild logo 2 Device number 3 VDE mark Note Only appears on parts ordered with VDE
option See order entry table 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code
2003 Fairchild Semiconductor Corporation

FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler

Carrier Tape Specifications

A0 B0

User Direction of Feed

Symbol W t P0 D0 E F P2 P A0 B0 K0 W1 d

Description Tape Width Tape Thickness Sprocket Hole Pitch Sprocket Hole Diameter Sprocket Hole Location Pocket Location

Pocket Pitch Pocket Dimensions

Cover Tape Width Cover Tape Thickness Max. Component Rotation or Tilt Min. Bending Radius

Dimension in mm ± ± ± ± ± ± ± ± ± max 10° 30
2003 Fairchild Semiconductor Corporation

FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler

Reflow Profile

Temperature °C
245 C, s
260 C peak

Time above 183C, <160 sec

Ramp up =
0 1 2 3 4

Time Minute
• Peak reflow temperature 260 C package surface temperature
• Time of temperature higher than 183 C for 160 seconds or less
• One time soldering reflow is recommended

Output Power Derating

The maximum package power dissipation is 295mW. The package is limited to this level to ensure that under normal operating conditions and over extended temperature range that the semiconductor junction temperatures do not exceed 125°C. The package power is composed of three elements the LED, static operating power of the output IC, and the power dissipated in the output power MOSFET transistors. The power rating of the output IC is 250mW. This power is divided between the static power of the integrated circuit, which is the product of IDD times the power supply voltage VDD VEE . The maximum IC static output power is 150mW, VDD VEE = 25V, IDD = 6mA. This maximum condition is valid over the operational temperature range of -40°C to +100°C. Under these maximum operating conditions, the output of the power MOSFET is allowed to dissipate 100mW of power.

The absolute maximum output power dissipation versus ambient temperature is shown in Figure The output driver is capable of supplying 100mW of output power over the temperature range from -40°C to 87°C. The output derates to 90mW at the absolute maximum operating temperature of 100°C.

Fig. 12 Absolute Maximum Power Dissipation
vs. Ambient Temperature

VDD VEE = Max. = 25V IDD = 6mA LED Power = 45mW

The output power is the product of the average output current squared times the output transistor’s RDS ON :

PO AVG = IO AVG 2
• RDS ON

The IO AVG is the product of the duty factor times the peak current flowing in the output. The duty factor is the ratio of the ‘on’ time of the output load current divided by the period of the operating frequency. An RDS ON of results in an average output load current of 200mA. The load duty factor is a ratio of the average output time of the power MOSFET load circuit and period of the driving frequency.

The maximum permissible, operating frequency is determined by the load supplied to the output at its resulting output pulse width. Figure 13 shows an example of a 0.03µF gate to source capacitance with a series resistance of This reactive load results in a composite average pulse width of 1.5µs. Under this load condition it is not necessary to derate the absolute maximum output current out to 250kHz.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FOD3181S Datasheet file may be downloaded here without warranties.

Datasheet ID: FOD3181S 514961