FMPA2151

FMPA2151 Datasheet

FMPA2151 GHz and GHz Dual Band Linear Power Amplifier Module Preliminary

Part	Datasheet
FMPA2151	FMPA2151 (pdf)

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FMPA2151 GHz and GHz Dual Band Linear Power Amplifier Module Preliminary May 2005 FMPA2151 GHz and GHz Dual Band Linear Power Amplifier Module Preliminary • Dual band operation in a single package design • Integrated bias bypass • >30 dB modulated gain to GHz band • >30 dB modulated gain to GHz band • 27 dBm output power 1 dB compression for both frequency bands • % EVM at 20 dBm modulated power out GHz • % EVM at 20 dBm modulated power out GHz • V positive supply operation • Separate integrated power detectors with 20 dB dynamic range • 16 pin 4 x 4 x mm leadless package • Internally matched to 50 ohms and DC blocked RF input/output • Optimized for use in 802.11a/b/g applications Device 4 x 4 x 1.4mm The FMPA2151 is a dual frequency band power amplifier module designed for high performance WLAN applications in the GHz and the GHz frequency bands. The 16 pin 4 x 4 x mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. Only two external bias bypass capacitors are required. The two on-chip detectors provide power sensing capability. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT technology. 21X5Y1 TTZ Electrical Characteristics1 802.11g GHz OFDM Modulation with 176 µs burst time, 100 µs idle time 54 Mbps Data Rate, MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage PA ON Mirror Supply Current PA ON Gain Average Packet Current +20dBm Pout EVM +20dBm Pout2 Detector Output +20dBm Pout Detector Output +5dBm Pout Spectral Mask Compliance3 31 170 850 230 +20 Units GHz V mA dB mA % mV Notes VCC=3.3V, PA ON 2.4=3.3V, TA=25°C, PA is constantly biased, system. Percentage includes system noise floor of EVM=0.8%. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. 2005 Fairchild Semiconductor Corporation FMPA2151 GHz and GHz Dual Band Linear Power Amplifier Module Preliminary Electrical Characteristics1 802.11a OFDM Modulation with 176 µs burst time, 100 µs idle time 54 Mbps Data Rate, MHz Bandwidth Parameter Frequency Collector Supply Voltage Mirror Supply Voltage PA ON Mirror Supply Current PA ON Gain Average Packet Current +20dBm Pout EVM +18dBm Pout2 to 5.35GHz EVM +20dBm Pout2 to 5.9GHz Detector Output +20dBm Pout Detector Output +5dBm Pout Spectral Mask Compliance3 32 295 820 195 +20 Units GHz V mA dB mA % % mV Absolute Maximum Ratings4 VCC ICC PA ON Pin Tcase Tstg Parameter Positive Supply Voltage Supply Current Positive Bias Voltage RF Input Power Case Operating Temperature Storage Temperature Ratings 6 500 4 0 -40 to +85 -55 to +150 Units V mA V dBm °C °C Notes VCC=3.3V, PA ON 5.5=3.3V, TA=25°C, PA is constantly biased, system. Percentage includes system noise floor of EVM=0.8%. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values. FMPA2151 GHz and GHz Dual Band Linear Power Amplifier Module Preliminary Performance Data 802.11b/g OFDM Modulation with 176 ms burst time, 100 ms idle time 54 Mbps Data Rate, MHz Bandwidth Total Measured EVM %

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FMPA2151 GHz and GHz Dual Band Linear Power Amplifier Module Preliminary

May 2005

FMPA2151 GHz and GHz Dual Band Linear Power Amplifier Module Preliminary
• Dual band operation in a single package design
• Integrated bias bypass
• >30 dB modulated gain to GHz band
• >30 dB modulated gain to GHz band
• 27 dBm output power 1 dB compression for both
frequency bands
• % EVM at 20 dBm modulated power out GHz
• % EVM at 20 dBm modulated power out GHz
• V positive supply operation
• Separate integrated power detectors with 20 dB dynamic
range
• 16 pin 4 x 4 x mm leadless package
• Internally matched to 50 ohms and DC blocked RF
input/output
• Optimized for use in 802.11a/b/g applications

Device 4 x 4 x 1.4mm

The FMPA2151 is a dual frequency band power amplifier module designed for high performance WLAN applications in the GHz and the GHz frequency bands. The 16 pin 4 x 4 x mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. Only two external bias bypass capacitors are required. The two on-chip detectors provide power sensing capability. The PA’s low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT technology.
21X5Y1 TTZ

Electrical Characteristics1 802.11g GHz OFDM Modulation
with 176 µs burst time, 100 µs idle time 54 Mbps Data Rate, MHz Bandwidth

Parameter

Frequency Collector Supply Voltage Mirror Supply Voltage PA ON Mirror Supply Current PA ON Gain Average Packet Current +20dBm Pout EVM +20dBm Pout2 Detector Output +20dBm Pout Detector Output +5dBm Pout Spectral Mask Compliance3
31 170 850 230 +20

Units

GHz V mA dB mA % mV

Notes VCC=3.3V, PA ON 2.4=3.3V, TA=25°C, PA is constantly biased, system. Percentage includes system noise floor of EVM=0.8%. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
2005 Fairchild Semiconductor Corporation

FMPA2151 GHz and GHz Dual Band Linear Power Amplifier Module Preliminary

Electrical Characteristics1 802.11a OFDM Modulation
with 176 µs burst time, 100 µs idle time 54 Mbps Data Rate, MHz Bandwidth

Parameter

Frequency Collector Supply Voltage Mirror Supply Voltage PA ON Mirror Supply Current PA ON Gain Average Packet Current +20dBm Pout EVM +18dBm Pout2 to 5.35GHz EVM +20dBm Pout2 to 5.9GHz Detector Output +20dBm Pout Detector Output +5dBm Pout Spectral Mask Compliance3
32 295 820 195 +20

Units

GHz V mA dB mA % % mV

Absolute Maximum Ratings4

VCC ICC PA ON Pin Tcase Tstg

Parameter

Positive Supply Voltage Supply Current Positive Bias Voltage RF Input Power Case Operating Temperature Storage Temperature

Ratings
6 500
4 0 -40 to +85 -55 to +150

Units

V mA V dBm °C °C

Notes VCC=3.3V, PA ON 5.5=3.3V, TA=25°C, PA is constantly biased, system. Percentage includes system noise floor of EVM=0.8%. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.

FMPA2151 GHz and GHz Dual Band Linear Power Amplifier Module Preliminary

Performance Data 802.11b/g OFDM Modulation
with 176 ms burst time, 100 ms idle time 54 Mbps Data Rate, MHz Bandwidth

Total Measured EVM %

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Datasheet ID: FMPA2151 514915